TS8514VB-SF-F datasheet(2/4 Pages) VISHAY

部品番号	TS8514VB-SF-F

部品情報	Specification of High Power IR Emitting Diode Chip

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メーカー	VISHAY [Vishay Siliconix]

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TS8514VB

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Vishay Semiconductors

Rev. 1.0, 11-Apr-17

2

Document Number: 84403

For technical questions, contact: optochipsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Relative Spectral Emission

φe rel = f (λ)

Fig. 2 - Radiant Characteristics

Irel = f(

ϕ)

DIMENSIONS

Fig. 3 - Sectional View

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

VF

-1.55-

V

Radiant power (1)

IF = 100 mA

φe

-38

-

mW

Reverse voltage

IR = 10 μA

VR

10

-

V

Angle of half intensity

IF = 100 mA

ϕ

-60

-

deg

Peak wavelength

IF = 100 mA

λp

840

855

870

nm

Spectral bandwidth

IF = 100 mA

λ0.5

-30

-

nm

Rise time / fall time

IF = 100 mA

tr, tf

-10

-

ns

0

10

20

30

40

50

60

70

80

90

100

700

750

800

850

900

950

λ - Wavelength (nm)

I

F = 50 mA

0.4

0.2

0

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

MECHANICAL DIMENSIONS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Length of chip edge (x-direction)

Lx

-

0.355

-

mm

Length of chip edge (y-direction)

Ly

-

0.355

-

mm

Die height

H

-

0.17

-

mm

Diameter of bondpad

d

-

0.105

-

mm

105 μm

Bonding area

(0.35)

typ. 170 μm

n-electrode

p-electrode

p-n junction

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