SSA70N90J datasheet(2/3 Pages) SECOS

部品番号	SSA70N90J

部品情報	N-Ch Enhancement Mode Power MOSFET

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メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

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2 / 3 page

Elektronische Bauelemente

SSA70N90J

90A, 70V, RDS(ON) 7.5 m

N-Ch Enhancement Mode Power MOSFET

15-Feb-2016 Rev. A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

70

-

V

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

-

1

µA

VDS=70V, VGS=0

Gate-Body Leakage Current

IGSS

-

±100

nA

VDS=0V, VGS= ±20V

Gate-Threshold Voltage

3

VGS(th)

2

-

4

V

VDS=VGS, ID=250µA

Static Drain-Source On-Resistance

3

RDS(ON)

-

7.5

m

VGS=10V, ID=40A

Forward Transconductance

3

gFS

-

60

-

S

VDS=5V, ID=40A

Diode Forward Voltage

3

VSD

-

1.2

V

VGS=0, IS=20A

Dynamic Characteristics

Input Capacitance

Ciss

-

4871

-

Output Capacitance

Coss

-

630.6

-

Reverse Transfer Capacitance

Crss

-

410.3

-

pF

VDS=15V

VGS=0

f=1MHz

Gate Resistance

Rg

-

0.63

-

VDS=VGS=0, f=1MHz

Switching Characteristics

Total Gate Charge

Qg

-

85.7

-

Gate-Source Charge

Qgs

-

23.2

-

Gate-Drain Charge

Qgd

-

31.2

-

nC

VDS=48V

VGS=10V

ID=84A

Turn-on Delay Time

Td(on)

-

36.1

-

Rise Time

Tr

-

54.3

-

Turn-off Delay Time

Td(off)

-

85.2

-

Fall Time

Tf

-

37.3

-

nS

VDS=30V

VGS=10V

RGEN=10

ID=42A

Body Diode Reverse Recovery Time

3

TRR

-

88.3

A

IF=84A, dl/dt=100A/µs

Body Diode Reverse Recovery Charge

3

QRR

-

65.9

A

IF=84A, dl/dt=100A/µs

Notes:

1.

Repetitive rating: The pulse width is limited by the junction temperature.

2.

The surface of the device is mounted on a FR4 board, t≦10s.

3.

Pulse test：Pulse width≦300µs, duty cycle≦2%.

4.

EAS condition: VDD=37.5V, L=0.5mH, RG=25 , starting TJ=25°C.

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