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TSHG6200 データシート(PDF) 2 Page - Vishay Siliconix

部品番号 TSHG6200
部品情報  High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHG6200 データシート(HTML) 2 Page - Vishay Siliconix

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TSHG6200
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
2
Document Number: 81078
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0
1020
3040506070
8090 100
21142
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21143
R
thJA = 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 μs
VF
2.3
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
120
180
360
mW/sr
IF = 1 A, tp = 100 μs
Ie
1800
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φe
50
mW
Temperature coefficient of
φe
IF = 100 mA
TK
φe
- 0.35
%/K
Angle of half intensity
ϕ
± 10
deg
Peak wavelength
IF = 100 mA
λp
850
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temperature coefficient of
λp
IF = 100 mA
TK
λp
0.25
nm/K
Rise time
IF = 100 mA
tr
20
ns
Fall time
IF = 100 mA
tf
13
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
18
MHz
Virtual source diameter
d3.7
mm


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