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データシートサーチシステム |
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データシートサーチシステム |
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2SD1114 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1114 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1114 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) · High DC Current Gain : hFE= 500(Min) @IC= 4A · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Solenoid/ relay drivers · Motor control · Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ Download from alldatasheet.com |
同様の部品番号 - 2SD1114 |
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同様の説明 - 2SD1114 |
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