データシートサーチシステム |
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SDT04S60 データシート(PDF) 1 Page - Infineon Technologies AG |
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SDT04S60 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 9 page 2004-02-11 Page 1 SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W1) • No forward recovery Product Summary VRRM 600 V Qc 13 nC IF 4 A P-TO220-2-2. P-TO252-3-1. P-TO220-3-1. Pin 1 PIN 2 PIN 3 n.c. C A Type Package Ordering Code SDP04S60 P-TO220-3-1. Q67040-S4369 SDD04S60 P-TO252-3-1. Q67040-S4368 SDT04S60 P-TO220-2-2. Q67040-S4445 Marking D04S60 D04S60 D04S60 n.c. A C C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, T C=100°C IF 4 A RMS forward current , f=50Hz IFRMS 5.6 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 12.5 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 18 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 40 i 2t value , T C=25°C, tp=10ms ∫i2dt 0.78 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation , T C=25°C Ptot 36.5 W Operating and storage temperature Tj , Tstg -55... +175 °C |
同様の部品番号 - SDT04S60 |
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同様の説明 - SDT04S60 |
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