データシートサーチシステム |
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SM6J45 データシート(PDF) 1 Page - Toshiba Semiconductor |
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SM6J45 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM6G45,SM6J45,SM6G45A,SM6J45A 2001-07-13 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM6G45,SM6J45,SM6G45A,SM6J45A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S ON−State Current : IT (RMS) = 6A l High Commutating (dv / dt) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM6G45 SM6G45A 400 Repetitive Peak Off− State Voltage SM6J45 SM6J45A VDRM 600 V R.M.S On−State Current (Full Sine Waveform Tc = 104°C) IT (RMS) 6 A 60 (50Hz) Peak One Cycle Surge On−State Current (Non−Repetitive) ITSM 66 (60Hz) A I 2 t Limit Value I 2 t 18 A 2 s Critical Rate of Rise of On−State Current di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C JEDEC TO−220AB JEITA ― TOSHIBA 13−10G1A Weight: 2.0g Unit: mm |
同様の部品番号 - SM6J45 |
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同様の説明 - SM6J45 |
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