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1PS10SB82 データシート(PDF) 2 Page - NXP Semiconductors |
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1PS10SB82 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 2003 Aug 20 2 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB82 FEATURES • Low forward voltage • Low diode capacitance • Leadless ultra small plastic package (1.0 mm × 0.6 mm × 0.5 mm) • Boardspace 1.17 mm2 (approx. 10% of SOT23) • Power dissipation comparable to SOT23. APPLICATIONS • UHF mixers • Sampling circuits • Modulators • Phase detectors • Mobile communication, digital (still) cameras, PDA’s and PCMCIA cards. DESCRIPTION An epitaxial Schottky barrier diode encapsulated in a SOD882 leadless ultra small plastic package. ESD sensitive device, observe handling precautions. handbook, halfpage MDB391 Bottom view Fig.1 Simplified outline (SOD882), pin configuration and symbol. Marking code: S5. The marking bar indicates the cathode. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 15 V IF continuous forward current − 30 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
同様の部品番号 - 1PS10SB82 |
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同様の説明 - 1PS10SB82 |
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