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HCF4013B データシート(PDF) 4 Page - STMicroelectronics |
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HCF4013B データシート(HTML) 4 Page - STMicroelectronics |
4 / 9 page HCF4013B 4/9 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. (1) Input tr, tf = 5ns (2) If more than unit is cascaded in a parallel clocked application, tr should be made less than or equal to the sum of the fixed propagation delay time at 15pF and the transition time of the carry output driving stage for the estimated capacitive load. Symbol Parameter Test Condition Value (*) Unit VDD (V) Min. Typ. Max. tTLH tTHL Propagation Delay Time (CLOCK to Q or Q outputs) 5 150 300 ns 10 65 130 15 45 90 tPLH Propagation Delay Time (SET to Q or RESET to Q) 5 150 300 ns 10 65 130 15 45 90 tPHL Propagation Delay Time(SET to Q or RESET to Q) 5 200 400 ns 10 85 170 15 60 120 tTHL tTLH Transition Time 5 100 200 ns 10 50 100 15 40 80 fCL (1) Maximum Clock Input Frequency 5 3.5 7 MHz 10 8 16 15 12 24 tW Clock Pulse Width 5 140 70 ns 10 60 30 15 40 20 tr , tf (2) Clock Input Rise or Fall Time 515 µs 10 4 15 1 tW Set or Reset Pulse Width 5 180 90 ns 10 80 40 15 50 25 tsetup Data Setup Time 5 40 20 ns 10 20 10 15 15 7 |
同様の部品番号 - HCF4013B |
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同様の説明 - HCF4013B |
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